• BS170 MOSFET Transistor in TO-92 Package
  • BS170 MOSFET Transistor in TO-92 Package

BS170 MOSFET Transistor in TO-92 Package

£0.79
VAT included

These N-Channel enhancement mode field effect transistors have been designed to minimise on-state resistance while providing rugged, reliable, and fast switching performance. The can be used in most applications requiring up to 500mA DC and are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switch...

Volume discounts

Quantity Unit discount You Save
5 £0.39 Up to £1.95
10 £0.44 Up to £4.40
20 £0.49 Up to £9.80
Quantity

These N-Channel enhancement mode field effect transistors have been designed to minimise on-state resistance while providing rugged, reliable, and fast switching performance. The can be used in most applications requiring up to 500mA DC and are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Type Designator: BS170
Type of BS170 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 0.83
Maximum drain-source voltage |Uds|, V: 60
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 0.5
Maximum junction temperature (Tj), °C: 150
Rise Time of BS170 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 5
Package: TO92

Dimensions
Image

Datasheet is available on our support forum here.

HCTRAN0004
408 Items

Specific References

7 other products in the category