12N10L FET Transistor RFP12N10

HCTRAN0002

New

N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
150 oC

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£ 1.49

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N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Drain to Source Voltage: 100V
Drain to Gate Voltage: 100V
Continuous Drain Current: 12A
Gate to Source Voltage: +/- 20V
Maximum Power Dissipation: 60W
Linear Derating Factor: 0.48 W/oC
Operating and Storage Temp: -55 to 150 oC
Product Code: HCTRAN0002

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