12N10L FET Transistor RFP12N10
N-Channel enhancement mode silicon gate power field effect transistors designed for...
A complementary power Darlington transistor in a through-hole TO-220 package. Being a Darlington transistor it has a very high current gain of 1000 but can also be used as a switching transistor for controlling power to devices from a microcontroller with a collector - emitter voltage of up to 100V and a current of 5A (8A peak).
A complementary power Darlington transistor in a through-hole TO-220 package. Being a Darlington transistor it has a very high current gain of 1000 but can also be used as a switching transistor for controlling power to devices from a microcontroller with a collector - emitter voltage of up to 100V and a current of 5A (8A peak).
Specifications:
Product code: HCTRAN0006
Transistor type: Complementary pair NPN Darlington
Package type: TO-220
Absolute maximum rating:
Collector-emitter voltage (IB = 0): 100V
Emitter-base voltage (IC = 0): 5V
Collector current: 5A
Collector peak current: 8A
Electrical characteristics:
Base-emitter on voltage (IC = 3A,VCE = 3 V): 2.5V
Collector-emitter sustaining voltage (IB = 0): 100V
Collector-emitter saturation voltage(IC = 3 A,IB = 12 mA): 2V
DC current gain: 1000
Collector cut-off current (IB = 0, VCE = 100 V): 0.5mA
Emitter cut-off current (IC = 0, VEB = 5 V): 2mA
Datasheet available on our support forum here.
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