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These N-Channel enhancement mode field effect transistors have been designed to minimise on-state resistance while providing rugged, reliable, and fast switching performance. The can be used in most applications requiring up to 500mA DC and are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switch...
These N-Channel enhancement mode field effect transistors have been designed to minimise on-state resistance while providing rugged, reliable, and fast switching performance. The can be used in most applications requiring up to 500mA DC and are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Type Designator: BS170
Type of BS170 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 0.83
Maximum drain-source voltage |Uds|, V: 60
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 0.5
Maximum junction temperature (Tj), °C: 150
Rise Time of BS170 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 5
Package: TO92
Dimensions
Datasheet is available on our support forum here.
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These N-Channel enhancement mode field effect transistors have been designed to minimise on-state resistance while providing rugged, reliable, and fast switching performance. The can be used in most applications requiring up to 500mA DC and are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switch...
